Role of Carrier Transport in Source and Drain Electrodes of High-Mobility MOSFETs
Role of Carrier Transport in Source and Drain Electrodes of High-Mobility MOSFETs
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DOI：
10.1109/led.2010.2040024
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发表时间：
2010-02
影响因子：
4.9
通讯作者：
H. Tsuchiya;A. Maenaka;T. Mori;Y. Azuma
中科院分区：
文献类型：
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作者：
H. Tsuchiya;A. Maenaka;T. Mori;Y. Azuma
我们已经研究了III-V族半导体和Ge n沟道MOSFET的性能潜力的基础上的量子校正的Monte Carlo器件模拟。我们发现，当接近弹道极限时，III-V MOSFET失去了其相对于Si和Ge MOSFET的固有优势，因为由于弹道输运引起的电流增强变得不如Si和Ge沟道有效。然而，发现高源极和漏极掺杂浓度通过降低寄生电阻和减轻归因于低态密度的“源极饥饿”来极大地改善III-V MOSFET的性能。
We have studied the performance potentials of III-V semiconductors and Ge n-channel MOSFETs based on a quantum-corrected Monte Carlo device simulation. We found that as a ballistic limit is approached, III-V MOSFETs lose their inherent advantage over Si and Ge MOSFETs because current enhancement due to ballistic transport becomes less effective than in Si and Ge channels. However, a high source and drain doping concentration was found to greatly improve the performance of III-V MOSFETs by reducing parasitic resistance and the mitigation of ¿source starvation¿ attributed to the low density of states.