100-mW kink-free blue-violet laser diodes with low aspect ratio
100-mW kink-free blue-violet laser diodes with low aspect ratio
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DOI：
10.1109/jqe.2002.806213
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发表时间：
2003-01
影响因子：
2.5
通讯作者：
T. Asano;T. Tojyo;T. Mizuno;M. Takeya;S. Ikeda;K. Shibuya;T. Hino;S. Uchida;M. Ikeda
中科院分区：
文献类型：
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作者：
T. Asano;T. Tojyo;T. Mizuno;M. Takeya;S. Ikeda;K. Shibuya;T. Hino;S. Uchida;M. Ikeda
首次成功制备了400 nm波段GaN基激光二极管（LD），其无扭结输出功率超过100 mW，且具有2.3的低纵横比。采用了一种新的脊结构，脊的外侧覆盖有Si/SiO2/SiO一个新的层结构周围的有源层被证明是相当有效的获得一个窄的光束发散角垂直于结平面，保持低阈值电流。在60/spl deg/C、30 mW连续波工作条件下，十个低纵横比LD已稳定工作1000 h以上。在高频调制的光反馈下测得的相对强度噪声低至-125 dB/Hz。这些结果表明该LD适合于下一代高密度光存储系统。
400-nm-band GaN-based laser diodes (LDs) operating with a kink-free output power of over 100 mW and having a low aspect ratio of 2.3 have been successfully fabricated for the first time. A new ridge structure, in which the outside of the ridge is covered with a stacked layer of Si on SiO/sub 2/ and the ridge width is as narrow as 1.5 /spl mu/m, is applied to realize high kink-free output power with a wide beam divergence angle parallel to the junction plane. A new layer structure around the active layer is demonstrated to be quite effective for obtaining a narrow beam divergence angle perpendicular to the junction plane, maintaining low threshold current. Ten LDs with low aspect ratio have been operated stably for over 1000 h under 30-mW continuous-wave operation at 60/spl deg/C. Relative intensity noise measured under optical feedback with high-frequency modulation is as low as -125 dB/Hz. These results indicate that this LD is suitable for next-generation high-density optical storage systems.