Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium
Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium
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DOI：
10.1063/1.4737611
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发表时间：
2012-07
影响因子：
3.2
通讯作者：
W. He;S. L. Lu;D. Jiang;J. Dong;A. Tackeuchi;H. Yang
中科院分区：
文献类型：
--
作者：
W. He;S. L. Lu;D. Jiang;J. Dong;A. Tackeuchi;H. Yang
光致发光和拉曼散射测量进行了Si掺杂的GaInP在Ge上生长。深宽带光致发光（PL）发射中心约1.4 eV的强度对Si掺杂剂，这是由于[Ge（Ga，In）-V（Ga，In）]配合物的强烈依赖。拉曼光谱提供了强有力的证据支持Si掺杂GaInP中存在[Ge（Ga，In）-Si（Ga，In）]复合物。通过[Ge（Ga，In）-V（Ga，In）]和[Ge（Ga，In）-Si（Ga，In）]配合物之间的竞争，解释了宽光致发光发射的蓝移和复合寿命随温度的增加。
Photoluminescence and Raman scattering measurements were performed on Si-doped GaInP grown on Ge. The deep broadband photoluminescence (PL) emission centered around 1.4 eV exhibits a strong dependence of strength on Si dopants, which is suggested to be due to [Ge(Ga,In)-V(Ga,In)] complexes. A strong evidence to support the existence of [Ge(Ga,In)-Si(Ga,In)] complexes in Si-doped GaInP is shown by Raman spectra. The blue shift of broad PL emission and the increased recombination life time with increased temperatures were explained by the competition between [Ge(Ga,In)-V(Ga,In)] and [Ge(Ga,In)-Si(Ga,In)] complexes.