Stable complementary inverters with organic field-effect transistors on Cytop fluoropolymer gate dielectric
Stable complementary inverters with organic field-effect transistors on Cytop fluoropolymer gate dielectric
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Cytop 含氟聚合物栅极电介质上具有有机场效应晶体管的稳定互补逆变器
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
B. Batlogg
中科院分区：
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作者：
M. Walser;W. Kalb;T. Mathis;T. Brenner;B. Batlogg
我们展示了小分子p型和n型有机半导体与高度防水的含氟聚合物Cytop™作为栅极电介质的组合结果。利用并五苯和N，N′-双十三烷基苝-3，4，9，10-四羧基二酰亚胺（PTCDI-C13）制备了具有高电学质量和稳定性的互补反相器，该反相器几乎不受重复栅极偏置应力的影响。组合的p型和n型场效应晶体管表现出接近理想的特性，非常小的滞后，和类似的饱和迁移率（约0.2平方厘米/V秒）。 特别是PTCDI-C13薄膜晶体管表现出显着的性能，在亚阈值制度，如果铬被用作接触材料的电子注入：一个接近零的开始和亚阈值摆幅低至0.6 V/十倍。
We present results on small-molecule p- and n-type organic semiconductors in combination with the highly water repellent fluoropolymer Cytop™ as the gate dielectric. Using pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylicdiimide (PTCDI-C13), we fabricated complementary inverters of high electrical quality and stability that are almost unaffected by repeated gate bias stress. The combined p- and n-type field-effect transistors show nearly ideal characteristics, very small hysteresis, and similar saturation mobility (∼0.2 cm2/V s). Particularly PTCDI-C13 thin-film transistors exhibit a remarkable performance in the subthreshold regime if chromium is used as contact material for electron injection: a near zero onset and a subthreshold swing as low as 0.6 V/decade.