Low-Temperature and High-Step-Coverage Polyimide TSV Liner Formation by Vapor Deposition Polymerization

Low-Temperature and High-Step-Coverage Polyimide TSV Liner Formation by Vapor Deposition Polymerization
复制标题

DOI：
10.7567/ssdm.2013.g-8-1
复制
发表时间：
2013-09
期刊：
The Japan Society of Applied Physics
影响因子：
--
通讯作者：
T. Fukushima;M. Murugesan;J. Bea;Kang-wook Lee;M. Koyanagi
T. Fukushima;M. Murugesan;J. Bea;Kang-wook Lee;M. Koyanagi
中科院分区：
其他
文献类型：
--
作者：
T. Fukushima;M. Murugesan;J. Bea;Kang-wook Lee;M. Koyanagi

文献摘要

被引文献

相似文献

摘要/ Abstract摘要：在200℃的温度下，以焦二甲基二酐（PMDA）和4,4′-氧化二胺（ODA）为原料，采用气相聚合法沿深Si孔沉积Kapton®保温层作为TSV衬垫。当我们分别使用直径为5m和15m的通孔时，步进覆盖率约为75%和近100%。厚度范围为800 ~ 1100 nm。此外，聚酰亚胺TSV衬垫在350°C时是稳定的，在TDS分析中没有观察到蒸发分子。采用自底向上电镀的方法成功制备了直径为15m，深度为68m，长径比为4.5的cu - tsv，衬里为聚酰亚胺。
Abstract A Kapton® insulation layer as a TSV liner was conformably deposited by vapor polymerization with pyromellitic dianhydride (PMDA) and 4,4'-oxydianiline (ODA) along deep Si vias at 200°C. The step coverages were approximately 75% and nearly 100% when we used the vias with diameters of 5m and 15 m, respectively. The thicknesses were ranging from 800 nm to 1100 nm. In addition, the polyimide TSV liner was stable at 350°C, where no vaporized molecules were observed from TDS analysis. Cu-TSVs (diameter: 15 m, depth: 68 m, aspect ratio: 4.5) with the polyimide liner were successfully formed by bottom-up electroplating.