Characterisation of Al0.52In0.48P mesa p-i-n photodiodes for X-ray photon counting spectroscopy
Characterisation of Al0.52In0.48P mesa p-i-n photodiodes for X-ray photon counting spectroscopy
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DOI：
10.1063/1.4956153
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发表时间：
2016-07
影响因子：
3.2
通讯作者：
S. Butera;G. Lioliou;A. Krysa;A. M. Barnett
中科院分区：
文献类型：
--
作者：
S. Butera;G. Lioliou;A. Krysa;A. M. Barnett
本文报道了用于x射线光子计数光谱的薄（2 μm） Al0.52In0.48P +-i-n+台面型光电二极管在室温下的性能。研究了两个直径为200 μm和400 μm的Al0.52In0.48P +-i-n+台面型光电二极管。暗电流结果显示为应用反向偏置的函数；在30 V （150 kV/cm）下，所有被分析器件的暗电流密度均<3 nA/cm2。电容测量作为应用反向偏压的函数也被报道。在55Fe放射性同位素x射线源照射下，采用10 μs整形时间采集x射线光谱。实验结果表明，对于直径为200 μm Al0.52In0.48P的器件，当反向偏置电压为15 V时，在5.9 keV下获得的最佳能量分辨率为930 eV。对系统进行了噪声分析，计算了不同噪声对系统的贡献。
Results characterising the performance of thin (2 μm i-layer) Al0.52In0.48P p+-i-n+ mesa photodiodes for X-ray photon counting spectroscopy are reported at room temperature. Two 200 μm diameter and two 400 μm diameter Al0.52In0.48P p+-i-n+ mesa photodiodes were studied. Dark current results as a function of applied reverse bias are shown; dark current densities <3 nA/cm2 were observed at 30 V (150 kV/cm) for all the devices analysed. Capacitance measurements as a function of applied reverse bias are also reported. X-ray spectra were collected using 10 μs shaping time, with the device illuminated by an 55Fe radioisotope X-ray source. Experimental results showed that the best energy resolution (FWHM) achieved at 5.9 keV was 930 eV for the 200 μm Al0.52In0.48P diameter devices, when reverse biased at 15 V. System noise analysis was also carried out, and the different noise contributions were computed.