Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets.
Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets.
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减少合成反铁磁体中的 Dzyaloshinskii-Moriya 相互作用和无场自旋轨道扭矩切换
DOI：
10.1038/s41467-021-23414-3
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发表时间：
2021-05-25
影响因子：
16.6
通讯作者：
Song C
中科院分区：
文献类型：
--
作者：
Chen R;Cui Q;Liao L;Zhu Y;Zhang R;Bai H;Zhou Y;Xing G;Pan F;Yang H;Song C
垂直磁化的人工合成反铁磁体（SAF）具有低净磁化强度、高热稳定性和易于阅读和写入的特点，已被广泛用于取代磁性隧道结中的铁磁自由层作为自旋电子器件的核心。到目前为止，利用自旋-轨道力矩（SOT）来实现垂直SAF的确定性切换已经被报道，而通常需要大的外部磁场来打破对称性，使得其对于应用是不切实际的。在这里，结合理论分析和实验结果，我们报告的铁磁体和相邻的重金属之间的界面结晶度的Dzyaloshinskiii-Moriya相互作用的有效调制在畴壁配置中起着重要的作用。通过在Bloch型和Néel型之间调整畴壁结构，我们成功地在一个简单的楔形结构的[Co/Pd]/Ru/[Co/Pd] SAF器件中实现了无场SOI诱导的磁化翻转.我们的工作为SOT器件中垂直SAF的应用提供了一条切实可行的途径，为高密度、低杂散场、低功耗的磁存储器件的发展铺平了道路。合成反铁磁体（SAF）由铁磁体与中性间隔物的交替层形成，联合收割机结合了反铁磁体和铁磁体的技术吸引人的特性。在这里，Chen等人展示了SAF的受控切换，而不需要施加磁场。
Perpendicularly magnetized synthetic antiferromagnets (SAF), possessing low net magnetization and high thermal stability as well as easy reading and writing characteristics, have been intensively explored to replace the ferromagnetic free layers of magnetic tunnel junctions as the kernel of spintronic devices. So far, utilizing spin-orbit torque (SOT) to realize deterministic switching of perpendicular SAF have been reported while a large external magnetic field is typically needed to break the symmetry, making it impractical for applications. Here, combining theoretic analysis and experimental results, we report that the effective modulation of Dzyaloshinskii-Moriya interaction by the interfacial crystallinity between ferromagnets and adjacent heavy metals plays an important role in domain wall configurations. By adjusting the domain wall configuration between Bloch type and Néel type, we successfully demonstrate the field-free SOT-induced magnetization switching in [Co/Pd]/Ru/[Co/Pd] SAF devices constructed with a simple wedged structure. Our work provides a practical route for utilization of perpendicularly SAF in SOT devices and paves the way for magnetic memory devices with high density, low stray field, and low power consumption. Synthetic antiferromagnets (SAF), formed out of alternating layers of a ferromagnet with neutral spacer combine technologically appealing properties of both antiferromagnets and ferromagnets. Here, Chen et al demonstrate controlled switching of an SAF, without the need for an applied magnetic field.
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影响因子：
3.7
作者：
Kresse, G;Furthmuller, J
通讯作者：
Furthmuller, J
通过反铁磁体/铁磁体/氧化物结构中的自旋轨道力矩实现垂直磁化的无场切换
影响因子：
38.3
作者：
Oh, Young-Wan;Baek, Seung-Heon Chris;Park, Byong-Guk
通讯作者：
Park, Byong-Guk
影响因子：
3.7
作者：
Pai, Chi-Feng;Mann, Maxwell;Beach, Geoffrey S. D.
通讯作者：
Beach, Geoffrey S. D.
影响因子：
56.9
作者：
Liu, Luqiao;Pai, Chi-Feng;Buhrman, R. A.
通讯作者：
Buhrman, R. A.
DOI：
10.1143/jjap.45.l1057
发表时间：
2006-10-01
期刊：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
影响因子：
--
作者：
Hayakawa, Jun;Ikeda, Shoji;Ohno, Hideo
通讯作者：
Ohno, Hideo