Low-bias negative differential resistance effect in armchair graphene nanoribbon junctions
Low-bias negative differential resistance effect in armchair graphene nanoribbon junctions
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DOI：
10.1063/1.4905269
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发表时间：
2015-01-05
影响因子：
4
通讯作者：
Quek, Su Ying
中科院分区：
文献类型：
--
作者：
Li, Suchun;Gan, Chee Kwan;Quek, Su Ying
具有扶手椅边缘的石墨烯纳米带（AGNRs）具有可以通过带宽度灵活调节的带隙。一种由较窄的AGNR夹在两个较宽的AGNR引线之间的结最近被报道拥有两个接近费米能级的完美传输通道。在这里，我们报告了通过使用偏置电压将这些传输通道驱动到更宽的AGNR引线的间隙中，我们可以获得负差分电阻（NDR）效应。由于AGNR结的固有特性，导集偏置低至0.2V左右，谷电流几乎消失。我们进一步表明，这种NDR效应对结、衬底的原子结构细节以及结是通过蚀刻还是通过氢化制成的细节都是稳健的。(C) 2015 AIP出版有限责任公司
Graphene nanoribbons with armchair edges (AGNRs) have bandgaps that can be flexibly tuned via the ribbon width. A junction made of a narrower AGNR sandwiched between two wider AGNR leads was recently reported to possess two perfect transmission channels close to the Fermi level. Here, we report that by using a bias voltage to drive these transmission channels into the gap of the wider AGNR lead, we can obtain a negative differential resistance (NDR) effect. Owing to the intrinsic properties of the AGNR junctions, the on-set bias reaches as low as similar to 0.2V and the valley current almost vanishes. We further show that such NDR effect is robust against details of the atomic structure of the junction, substrate, and whether the junction is made by etching or by hydrogenation. (C) 2015 AIP Publishing LLC.