Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2
Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2
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DOI：
10.1063/1.5016414
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发表时间：
2018-03-05
影响因子：
4
通讯作者：
Xing, Huili Grace
中科院分区：
文献类型：
--
作者：
Encomendero, Jimy;Yan, Rusen;Xing, Huili Grace
我们报道了由GaN/AlN共振隧穿二极管产生的室温微波振荡，表现出创纪录的峰值电流密度。分子束外延在独立的GaN衬底上生长的隧道异质结构由嵌入在两个AlN隧道势垒之间的薄GaN量子阱组成。室温电流-电压特性的最大峰值电流密度约为220kA/cm(2)。当偏置在负差分电导范围内时，测量到的微波振荡的基频类似于0.94 GHz，输出功率类似于3.0微瓦。振荡器的基频和输出功率都受到外部偏置电路的限制。利用小信号等效电路模型，预测这些二极管的最大固有振荡频率接近200 GHz。这项工作代表着朝着通过共振隧道传输实现微波发电迈出了重要的一步，共振隧道传输是一种超越当前III-氮化物高电子迁移率晶体管限制的超快过程。由AIP出版公司出版。
We report the generation of room temperature microwave oscillations from GaN/AlN resonant tunneling diodes, which exhibit record-high peak current densities. The tunneling heterostructure grown by molecular beam epitaxy on freestanding GaN substrates comprises a thin GaN quantum well embedded between two AlN tunneling barriers. The room temperature current-voltage characteristics exhibit a record-high maximum peak current density of similar to 220 kA/cm(2). When biased within the negative differential conductance region, microwave oscillations are measured with a fundamental frequency of similar to 0.94 GHz, generating an output power of similar to 3.0 mu W. Both the fundamental frequency and the output power of the oscillator are limited by the external biasing circuit. Using a small-signal equivalent circuit model, the maximum intrinsic frequency of oscillation for these diodes is predicted to be similar to 200 GHz. This work represents a significant step towards microwave power generation enabled by resonant tunneling transport, an ultra-fast process that goes beyond the limitations of current III-Nitride high electron mobility transistors. Published by AIP Publishing.