Evaluation of the Origin of Excited States Appeared in Small Si Single-electron Transistors
Evaluation of the Origin of Excited States Appeared in Small Si Single-electron Transistors
复制标题
小型硅单电子晶体管激发态起源的评价
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
Y. Takahashi
中科院分区：
文献类型：
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作者：
T. Uchida;M. Jo;H. Satoh;A. Tsurumaki-Fukuchi;M. Arita;A. Fujiwara1 ;Y. Takahashi
