Hybrid lithography for triple patterning decomposition and E-beam lithography
Hybrid lithography for triple patterning decomposition and E-beam lithography
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DOI：
10.1117/12.2046499
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发表时间：
2014-03
期刊：
影响因子：
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通讯作者：
Haitong Tian;Hongbo Zhang;Zigang Xiao;Martin D. F. Wong
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文献类型：
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作者：
Haitong Tian;Hongbo Zhang;Zigang Xiao;Martin D. F. Wong
随着我们进入14/10nm技术节点，单一图案化技术远远不足以制造缩小特征尺寸的特征。根据2011年国际半导体技术路线图1，双图形光刻技术已经可用于亚32纳米半间距技术节点的工业大规模生产。对于 14/10nm 技术节点，双重图案开始显示出其局限性，因为它使用过多的针迹来解决原生色彩冲突。缝合会增加制造成本，导致芯片潜在的功能错误，并造成良率损失。三重图案光刻和电子束光刻是两种突破当前光学光刻系统衍射极限的新兴技术。在本文中，我们研究了将三重图案光刻和电子束光刻的优点结合起来用于基于标准单元的设计。我们设计了一种方法来计算行结构布局的电子束发射的最佳数量的无缝合分解。该方法有望凸显使用混合光刻技术实现先进技术节点的必要性和优势。
As we advances into 14/10nm technology node, single patterning technology is far from enough to fabricate the features with shrinking feature size. According to International Technology Roadmap for Semiconductors in 2011,1 double patterning lithography is already available for massive productions in industry for sub-32nm half pitch technology node. For 14/10nm technology node, double patterning begins to show its limitations as it uses too many stitches to resolve the native coloring conflicts. Stitches will increase the manufacturing cost, lead to potential functional errors of the chip, and cause the yield lost. Triple patterning lithography and E-Beam lithography are two emerging techniques to beat the diffraction limit for current optical lithography system. In this paper, we investigate combining the merits of triple patterning lithography and E-Beam lithography for standard cell based designs. We devise an approach to compute a stitch free decomposition with the optimal number of E-Beam shots for row structure layout. The approach is expected to highlight the necessity and advantages of using hybrid lithography for advanced technology node.