Thermoelectric properties ofn-type Bi2(Te0.85Se0.15)3single crystals doped with CuBr and SbI3
Thermoelectric properties ofn-type Bi2(Te0.85Se0.15)3single crystals doped with CuBr and SbI3
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DOI：
10.1103/physrevb.85.125207
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发表时间：
2012-03
影响因子：
3.7
通讯作者：
Ö. C. Yelgel;G. P. Srivastava
中科院分区：
文献类型：
--
作者：
Ö. C. Yelgel;G. P. Srivastava
在这项工作中，我们提出了一个系统的研究半导体合金的热电性能。电子性质（费米能量，塞贝克系数，和电阻率）的计算在非本征和本征制度使用近自由电子近似和费米-狄拉克统计。晶格热导率的计算严格地考虑了非简谐声子相互作用。还考虑了施主电子和电子空穴对的热导率贡献。我们成功地解释了先前报道的实验测量的大小以及温度依赖性的电子和热输运系数，以及热电优值为Bi（TeSe）单晶与0.1重量%的CuBr和0.2重量%的SbI掺杂剂。的热导率的频率依赖性进行了详细的研究为0.2wt%的Sb I掺杂的样品在几个温度下。此外，合金化对（BiTe）（BiSe）单晶热电效率的影响进行了探讨。
In this work we present a systematic investigation of the thermoelectric properties of semiconductor alloys. Electronic properties (Fermi energy, Seebeck coefficient, and electrical resistivity) are calculated in both extrinsic and intrinsic regimes using the nearly-free-electron approximation and the Fermi-Dirac statistics. The lattice thermal conductivity is computed by including anharmonic phonon interactions rigorously. The thermal conductivity contributions from donor electrons, and electron-hole pairs are also taken into account. We successfully explain the previously reported experimental measurements of the magnitude as well as temperature dependence of the electronic and thermal transport coefficients, as well as the thermoelectric figure of meritfor the Bi(TeSe)single crystal with 0.1 wt % CuBr and 0.2 wt % SbIdopants. The frequency dependence of thermal conductivity is investigated in detail for a 0.2 wt % SbI-doped sample at several temperatures. Furthermore, the effect of alloying on the thermoelectric efficiency of (BiTe)(BiSe)single crystals is explored.