Transport properties and crystal structure of layered LaSb2
Transport properties and crystal structure of layered LaSb2
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层状LaSb2的输运特性和晶体结构
DOI：
10.1063/1.5081819
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发表时间：
2019
影响因子：
3.2
通讯作者：
B. Iversen
中科院分区：
文献类型：
--
作者：
K. Fischer;Nikolaj Roth;B. Iversen
LaSb 2具有沿c轴沿着的层状晶体结构，在面内正交a轴和B轴之间具有约2%的差异。在这里，我们报告的热导率，电阻率，塞贝克系数从10至300 K以及在10 K的磁阻。用货车德堡技术测量了单晶样品的面内电阻率张量，发现它是各向同性的。各向异性晶体结构可具有各向同性性质，但在本情况下，各向同性性质源于晶体缺陷。单晶X射线衍射提供了面内a-和b-方向混合的证据，导致观察到的衍射强度，其中预期系统性缺失。无论潜在的结构机制是孪生或堆垛层错是未知的，但它可能是以前观察到的电荷密度波状态的起源，它也可以解释高不饱和线性磁阻报告在这里。在室温条件下，LaSb 2在空气中是稳定的，5年后没有出现体相降解的迹象，但在非晶背景散射中观察到了一些变化。LaSb 2沿着c轴具有层状晶体结构，面内正交a轴和B轴之间的差异为0.2%。在这里，我们报告的热导率，电阻率，塞贝克系数从10至300 K以及在10 K的磁阻。用货车德堡技术测量了单晶样品的面内电阻率张量，发现它是各向同性的。各向异性晶体结构可具有各向同性性质，但在本情况下，各向同性性质源于晶体缺陷。单晶X射线衍射提供了面内a-和b-方向混合的证据，导致观察到的衍射强度，其中预期系统性缺失。无论潜在的结构机制是孪生或堆垛层错是未知的，但它可能是以前观察到的电荷密度波状态的起源，它也可以解释高不饱和线性磁阻报告在这里。在ambient公司...
LaSb2 has a layered crystal structure along the c-axis with ∼2% difference between the in-plane orthorombic a and b axes. Here, we report on the thermal conductivity, electrical resistivity, and Seebeck coefficient from 10 to 300 K as well as the magnetoresistance at 10 K. Using the van der Pauw technique on single crystal samples, the in-plane electrical resistivity tensor has been measured and it is found to be isotropic. An anisotropic crystal structure may have isotropic properties, but in the present case, the isotropic nature stems from crystal imperfection. Single crystal X-ray diffraction provides evidence of a mixing of the in-plane a- and b-directions leading to observed diffraction intensity where systematic absences are expected. Whether the underlying structural mechanism is twinning or stacking faults is unknown, but it could be the origin of the previously observed charge density wave states, and it may also explain the high unsaturating linear magnetoresistance reported here. At ambient conditions, LaSb2 is found to be stable in air, with no sign of bulk degradation after 5 years of storage; however, some change is observed in the amorphous background scattering.LaSb2 has a layered crystal structure along the c-axis with ∼2% difference between the in-plane orthorombic a and b axes. Here, we report on the thermal conductivity, electrical resistivity, and Seebeck coefficient from 10 to 300 K as well as the magnetoresistance at 10 K. Using the van der Pauw technique on single crystal samples, the in-plane electrical resistivity tensor has been measured and it is found to be isotropic. An anisotropic crystal structure may have isotropic properties, but in the present case, the isotropic nature stems from crystal imperfection. Single crystal X-ray diffraction provides evidence of a mixing of the in-plane a- and b-directions leading to observed diffraction intensity where systematic absences are expected. Whether the underlying structural mechanism is twinning or stacking faults is unknown, but it could be the origin of the previously observed charge density wave states, and it may also explain the high unsaturating linear magnetoresistance reported here. At ambient co...