Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate
Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate
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DOI：
10.1109/led.2009.2039024
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发表时间：
2010-03-01
影响因子：
4.9
通讯作者：
Lee, Jung-Hee
中科院分区：
文献类型：
--
作者：
Im, Ki-Sik;Ha, Jong-Bong;Lee, Jung-Hee
利用AlGaN/GaN异质结上极高的二维电子气密度(>；10(14)/cm(2))作为源漏，通过控制在硅衬底上生长GaN时产生的张应力，提出了一种常断GaN MOSFET。采用Al_2O_3栅绝缘层制作的MOSFET具有良好的器件性能，阈值电压为2V，漏电流为353 mA/mm，非本征跨导为98ms/mm，场效应迁移率为225 cm(2)/V.S.
A normally off GaN MOSFET was proposed by utilizing an extremely high 2-D electron-gas density (> 10(14)/cm(2)) at an AlGaN/GaN heterostructure as source and drain, which can be obtained by controlling the tensile stress accompanied with the growth of GaN on silicon substrate. The fabricated MOSFET with an Al2O3 gate insulator exhibited excellent device performance, such as a threshold voltage of 2 V, drain current of 353 mA/mm, extrinsic transconductance of 98 mS/mm, and field-effect mobility of 225 cm(2)/V.s.