A novel method for determining the gap‐state profile and its application to amorphous Si1−xGex: H films
A novel method for determining the gap‐state profile and its application to amorphous Si1−xGex: H films
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一种确定能隙态分布的新方法及其在非晶 Si1−xGex: H 薄膜中的应用
DOI：
10.1063/1.341751
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发表时间：
1988
影响因子：
3.2
通讯作者：
Hideharu Matsuura
中科院分区：
文献类型：
--
作者：
Hideharu Matsuura
提出了一种利用非晶/晶体异质结结构测定高阻非晶半导体能隙中态密度分布的新技术。该技术已经在未掺杂的氢化非晶硅（a‐Si:H）薄膜和硅锗（a‐Si - xGex: H）合金薄膜上进行了测试和应用，覆盖了1.3-1.7 eV的光学隙（E0）范围。对于E0=1.7 eV的未掺杂a‐Si:H，中隙DOS分布的峰值位于传导带迁移率边缘EC以下0.84 eV处，其值为2×1015 cm−3 eV−1。对于未掺杂的a‐Si1−xGex: H (E0=1.44 eV)，在低于EC的0.70 eV处也得到了相同的结果，量级为7×1016 cm−3 eV−1。这些中间间隙的DOS被发现与单占据的悬空键相关，代表了材料的均匀体性质，不受界面状态的影响。
A novel technique has been proposed for determining the density‐of‐state (DOS) distribution in the energy gap of highly resistive amorphous semiconductors, using amorphous/crystalline heterojunction structures. The technique has been tested and applied to undoped hydrogenated amorphous silicon (a‐Si:H) films and silicon‐germanium (a‐Si1−xGex: H ) alloy films, covering the optical gap (E0) range of 1.3–1.7 eV. For undoped a‐Si:H with E0=1.7 eV, the peak of the midgap DOS distribution has been located at 0.84 eV below the conduction‐band mobility edge, EC, with a value of 2×1015 cm−3 eV−1. For undoped a‐Si1−xGex: H (E0=1.44 eV), the same has been obtained at 0.70 eV below EC, with a magnitude of 7×1016 cm−3 eV−1. Those midgap DOS have been found to be correlated with singly occupied dangling bonds, representative of a homogeneous bulk property of the material, unaffected by interface states.