SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K
SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K
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DOI：
10.1109/led.2022.3179129
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发表时间：
2022-07-01
影响因子：
4.9
通讯作者：
Kimoto, T.
中科院分区：
文献类型：
--
作者：
Kaneko, M.;Nakajima, M.;Kimoto, T.
在这里，我们表明，碳化硅（SiC）的互补逻辑门组成的p-和n-沟道结型场效应晶体管（JFET）的离子注入制造的工作在623 K的电源电压低至1.4 V的互补JFET（CJFET）反相器的逻辑阈值电压漂移仅为0.2 V，从300至623 K。此外，CJFET逆变器的静态和动态特性的温度依赖性很好地解释了一个简单的SiC JFET的分析模型。
Here, we show that silicon carbide (SiC) complementary logic gates composed of p- and n-channel junction field-effect transistors (JFETs) fabricated by ion implantation operate at 623 K with a supply voltage as low as 1.4 V. The logic threshold voltage shift of the complementary JFET (CJFET) inverter is only 0.2 V from 300 to 623 K. Furthermore, temperature dependencies of the static and dynamic characteristics of the CJFET inverter are well explained by a simple analytical model of SiC JFETs.