A reliable approach to prepare brittle semiconducting materials for cross‐sectional transmission electron microscopy
A reliable approach to prepare brittle semiconducting materials for cross‐sectional transmission electron microscopy
复制标题
制备用于截面透射电子显微镜的脆性半导体材料的可靠方法
作者：
J. H. Dycus;J. Lebeau
在这里，我们提出了一种样品制备方法，它简化了非常脆的宽带隙半导体材料的横截面几何形状的减薄，用于(扫描)电子显微镜。以生长在蓝宝石和氮化铝衬底上的氮化铝薄膜为例，我们证明了可以常规地制备高质量的样品，同时大大减少了制备时间和耗材成本。这种方法消除了用电子显微镜研究各种材料的样品准备障碍。
Here, we present a sample preparation approach that simplifies the thinning of very brittle wide bandgap semiconducting materials in cross‐section geometry for (scanning) transmission electron microscopy. Using AlN thin films grown on sapphire and AlN substrates as case studies, we demonstrate that high‐quality samples can be routinely prepared while greatly reducing the preparation time and consumables cost. The approach removes the sample preparation barrier to studying a wide variety of materials by electron microscopy.