Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga<sub>2</sub>O<sub>3</sub> thin films fabricated by mist chemical vapor deposition
Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga<sub>2</sub>O<sub>3</sub> thin films fabricated by mist chemical vapor deposition
复制标题
前驱体浓度和生长时间对雾气化学气相沉积α-Ga<sub>2</sub>O<sub>3</sub>薄膜表面形貌和结晶度的影响
DOI：
10.2109/jcersj2.18082
复制
发表时间：
2018
影响因子：
1.1
通讯作者：
KAWAE Takeshi
中科院分区：
文献类型：
--
作者：
NAKABAYASHI Yuji;YAMADA Satoru;ITOH Satoshi;KAWAE Takeshi
