Fabrication of nanopillars by nanosphere lithography
Fabrication of nanopillars by nanosphere lithography
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DOI：
10.1088/0957-4484/17/5/028
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发表时间：
2006-03-14
期刊：
影响因子：
3.5
通讯作者：
Wang, TF
中科院分区：
文献类型：
--
作者：
Cheung, CL;Nikolic, RJ;Wang, TF
一种用于图案化和产生半导体纳米结构的低成本纳米球光刻方法提供了传统的自顶向下制造技术的潜在替代方案。森林的硅柱的子500 nm的直径和纵横比高达10的纳米球光刻和深反应离子蚀刻技术的组合使用制造。使用氧等离子体和时分复用“Bosch”工艺蚀刻纳米球蚀刻掩模涂覆的硅衬底，以产生不同长度、直径和间隔的纳米柱。扫描电子显微镜的数据表明，与纳米级的蚀刻掩模的硅蚀刻速率线性下降，增加所得的蚀刻结构的纵横比。
A low cost nanosphere lithography method for patterning and generation of semiconductor nanostructures provides a potential alternative to the conventional top-down fabrication techniques. Forests of silicon pillars of sub-500 nm diameter and with an aspect ratio up to 10 were fabricated using a combination of the nanosphere lithography and deep reactive ion etching techniques. The nanosphere etch mask coated silicon substrates were etched using oxygen plasma and a time-multiplexed 'Bosch' process to produce nanopillars of different length, diameter and separation. Scanning electron microscopy data indicate that the silicon etch rates with the nanoscale etch masks decrease linearly with increasing aspect ratio of the resulting etch structures.