BEOL-Compatible Multiple Metal-Ferroelectric-Metal (m-MFM) FETs Designed for Low Voltage (2.5 V), High Density, and Excellent Reliability
BEOL-Compatible Multiple Metal-Ferroelectric-Metal (m-MFM) FETs Designed for Low Voltage (2.5 V), High Density, and Excellent Reliability
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兼容 BEOL 的多种金属-铁电-金属 (m-MFM) FET，专为低电压 (2.5 V)、高密度和出色的可靠性而设计
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
T. Hou
中科院分区：
文献类型：
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作者：
Mengyao Yan;Ming;Hsin;Yu;Y. Chu;Tian;P. Yeh;Chih;Yu;Jian;P. Tzeng;S. Sheu;W. Lo;Chih;T. Hou
建立了考虑动态铁电开关和电荷注入的实验校准SPICE模型，以共同优化MFMFET的存储器窗口，写入速度，耐久性和保持力，其中标准BEOL HfZrOx MFM电容器堆叠在逻辑晶体管的顶部。这款具有前景的SOC兼容、低功耗和低电压嵌入式存储器在±2.5 V下编程3 μs时可实现> 104的高电流开关比，而不会影响10年的保持时间和与MIM相当的耐久性。还提出了一种利用多个MFM的新型m-MFMFET。m-MFMFET实现了与标准MFMFET相当的性能，但进一步将单位单元尺寸减小了22%。
An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %.