Electronic properties of atomically abrupt tunnel junctions in silicon
Electronic properties of atomically abrupt tunnel junctions in silicon
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硅中原子突变隧道结的电子特性
DOI：
10.1103/physrevb.75.121303
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发表时间：
2007
影响因子：
3.7
通讯作者：
M. Simmons
中科院分区：
文献类型：
--
作者：
F. Rueß;W. Pok;K. Goh;A. Hamilton;M. Simmons
我们探讨了在横向图案化的晶体硅隧道结中原子级尖锐的磷掺杂分布对低温下电子输运性质的影响。原子级精确的图案化是利用扫描隧道显微镜结合低温硅分子束外延生长的氢光刻技术实现的。我们展示了势垒高度为0.5\phantom {\rule{0.3em}{0 ex}}\mathrm{meV}$的48\text {\ensuremath{-}}\mathrm{nm}$隧道间隙的电导调制，并强调了此类器件如何作为敏感的电荷传感器。
We explore the influence of atomically sharp phosphorus doping profiles in laterally patterned tunnel junctions in crystalline silicon on the electronic transport properties at low temperatures. Atomically precise patterning is realized using scanning-tunneling-microscope-based hydrogen lithography in combination with low-temperature Si growth by molecular beam epitaxy. We show the conductance modulation of a $48\text{\ensuremath{-}}\mathrm{nm}$ tunnel gap with a barrier height of $0.5\phantom{\rule{0.3em}{0ex}}\mathrm{meV}$ and highlight how such devices can act as sensitive charge sensors.