Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions.
Spin-dependent transport properties of Fe3O4/MoS2/Fe3O4 junctions.
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DOI：
10.1038/srep15984
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发表时间：
2015-11-02
影响因子：
4.6
通讯作者：
Shvets IV
中科院分区：
文献类型：
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作者：
Wu HC;Coileáin CÓ;Abid M;Mauit O;Syrlybekov A;Khalid A;Xu H;Gatensby R;Jing Wang J;Liu H;Yang L;Duesberg GS;Zhang HZ;Abid M;Shvets IV
磁铁矿是一种具有858 K高居里温度的半金属，使其成为磁隧道结（MTJ）的有希望的候选者。然而，在Fe 3 O 4/MgO/Fe 3 O 4 MTJ结构中利用其半金属性质的初步努力远没有希望。寻找合适的阻挡层材料，使阻挡层与Fe_3O_4的界面保持Fe_3O_4的半金属性质，是该领域的主要挑战之一。二维（2D）材料可以是用于此目的的良好候选者。二硫化钼（MoS 2）是一种过渡金属二硫属化物（TMD）半导体，具有独特的电子，光学和催化性能。在这里，我们显示的第一原理计算的基础上，Fe 3 O 4保持在二硫化钼和Fe 3 O 4之间的界面处的几乎完全自旋极化的电子带。首次尝试制备了Fe_3O_4/MoS_2/Fe_3O_4微隧道结。在200 K以下观察到了明显的隧道磁电阻（TMR）信号。因此，我们的实验和理论研究表明，二硫化钼可以是一个很好的屏障材料的Fe 3 O 4为基础的MTJ。我们的计算还表明，结合单层或双层二硫化钼的结是金属的。
Magnetite is a half-metal with a high Curie temperature of 858 K, making it a promising candidate for magnetic tunnel junctions (MTJs). Yet, initial efforts to exploit its half metallic nature in Fe3O4/MgO/Fe3O4 MTJ structures have been far from promising. Finding suitable barrier layer materials, which keep the half metallic nature of Fe3O4 at the interface between Fe3O4 layers and barrier layer, is one of main challenges in this field. Two-dimensional (2D) materials may be good candidates for this purpose. Molybdenum disulfide (MoS2) is a transition metal dichalcogenide (TMD) semiconductor with distinctive electronic, optical, and catalytic properties. Here, we show based on the first principle calculations that Fe3O4 keeps a nearly fully spin polarized electron band at the interface between MoS2 and Fe3O4. We also present the first attempt to fabricate the Fe3O4/MoS2/Fe3O4 MTJs. A clear tunneling magnetoresistance (TMR) signal was observed below 200 K. Thus, our experimental and theoretical studies indicate that MoS2 can be a good barrier material for Fe3O4 based MTJs. Our calculations also indicate that junctions incorporating monolayer or bilayer MoS2 are metallic.