Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition
Effects of C/Si ratio in fast epitaxial growth of 4H-SIC(0001) by vertical hot-wall chemical vapor deposition
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DOI：
10.1016/j.jcrysgro.2005.03.093
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发表时间：
2005-08-01
影响因子：
1.8
通讯作者：
Matsunami, H
中科院分区：
文献类型：
--
作者：
Fujiwara, H;Danno, K;Matsunami, H
研究了在垂直热壁反应器中用化学气相沉积法快速生长4 H-SiC（0 0 0 1）外延层时，生长速率、表面形貌、微管闭合比、掺杂浓度和深能级浓度与C/Si比的关系。随着源气体C/Si比的增加，厚外延层的掺杂、Z（1/2）和EH 6/7中心浓度降低。通过调整C/Si比为0.7，在33 μ m/h的生长速率下获得了低掺杂浓度为1 × 10 ~（13）cm ~（-3）的镜面形貌，并且Z_（12）和EH_（6/7）中心的浓度分别保持在8 × 10 ~（12）和4 × 10 ~（12）cm ~（-3）的低浓度。(c)2005 Elsevier B. V.保留所有权利。
The C/Si ratio dependence of growth rate, surface morphology, micropipe closing ratio, doping concentration and deep-level concentration have been investigated in fast epitaxial growth of 4H-SiC (0 0 0 1) epilayers by chemical vapor deposition in a vertical hot-wall reactor. The doping, Z(1/2) and EH6/7 centers concentrations of thick epilayers decrease with increasing C/Si ratio of source gases. By adjusting the C/Si ratio at 0.7, specular surface morphology with a low doping concentration of 1 x 10(13) cm(-3) has been obtained at a growth rate of 33 mu m/h, and the concentrations Of Z1/2 and EH6/7 centers have been kept low, 8 x 10(12) and 4 x 10(12) cm(-3), respectively. (c) 2005 Elsevier B.V. All rights reserved.