Crack formation in strained SiGe grown on Ge-on-Si (111) and its suppression by patterning substrates
Crack formation in strained SiGe grown on Ge-on-Si (111) and its suppression by patterning substrates
复制标题
Ge-on-Si (111) 上生长的应变 SiGe 中裂纹的形成及其通过图案化衬底的抑制
DOI：
10.1016/j.mssp.2020.105153
复制
发表时间：
2020
影响因子：
4.1
通讯作者：
Sawano Kentarou
中科院分区：
文献类型：
--
作者：
Wagatsuma Youya;Alam Md Mahfuz;Okada Kazuya;Hoshi Yusuke;Yamada Michihiro;Hamaya Kohei;Sawano Kentarou
研究了生长在Ge on Si（111）和Ge（111）衬底上的张应变SiGe层的表面形貌、缺陷结构和应变状态。结果表明，在部分应变松弛的初始阶段，裂纹首先在等效（111）滑移面上产生，然后沿滑移面与表面的相交处沿着形成表面脊粗糙度。这些裂纹和由此产生的脊粗糙度可以通过Ge-on-Si（111）衬底的图案化来避免，这可能是由于图案边缘处的应力释放，表明该方法对于应变SiGe基自旋电子学和高迁移率器件应用是有希望的。
We study surface morphologies, defect structures and strain states in tensile-strained SiGe layers grown on Ge-on-Si(111) or Ge(111) substrates. It is found that at the initial stage of partial strain relaxation, cracks are generated on the equivalent (111) slip planes and followed by formation of surface ridge roughness along the intersections of the slip planes and the surface. These cracks and resultant ridge roughness can be avoided by the patterning of the Ge-on-Si(111) substrate presumably owing to stress relief at the edges of the patterns, indicating that this method is promising for strained SiGe-based spintronics and high mobility device applications.