Quantum reflection of He* on silicon -: art. no. 052901
Quantum reflection of He* on silicon -: art. no. 052901
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DOI：
10.1103/physreva.71.052901
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发表时间：
2005-05-01
影响因子：
2.9
通讯作者：
Shimizu, F
中科院分区：
文献类型：
--
作者：
Oberst, H;Tashiro, Y;Shimizu, F
用He ~*（2S ~ 3（1））原子冷束掠入射研究了平面抛光硅表面的量子反射。我们测量的反射率作为3和30厘米/秒之间的正常入射速度分量的函数。我们的结果是在合理的协议与计算的吸引货车范德华表面势使用的介电函数的Si和偶极极化率的He-*。我们讨论的导电性和薄的氧化层上的电势的影响。通过将我们的数据与先前用Ne-* 原子测量的数据进行比较，我们还能够确认反射率与原子质量的比例关系。
A cold beam of He-* (2 S-3(1)) atoms is used at grazing incidence to study the quantum reflection on a flat polished silicon surface. We measure the reflectivity as a function of the normal incident velocity component between 3 and 30 cm/s. Our result is in reasonable agreement with a calculation of the attractive van der Waals surface potential using the dielectric function of Si and the dipole polarizability of He-*. We discuss the influence of the conductivity and of a thin oxide layer on the potential. By comparing our data to those previously measured with Ne-* atoms, we are also able to confirm the scaling of the reflectivity with atomic mass.