Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
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DOI：
10.1063/1.3446889
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发表时间：
2010-05-31
影响因子：
4
通讯作者：
Koch, S. W.
中科院分区：
文献类型：
--
作者：
Hader, J.;Moloney, J. V.;Koch, S. W.
它示出的载流子损耗过程建模密度激活的缺陷复合可以再现实验观察到的下降的GaN基激光二极管的内部量子效率。(C)2010年美国物理学会。[doi：10.1063/1.3446889]
It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3446889]