Pulsed microwave plasma etching of polymers in oxygen and nitrogen for microelectronic applications
Pulsed microwave plasma etching of polymers in oxygen and nitrogen for microelectronic applications
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用于微电子应用的氧气和氮气中聚合物的脉冲微波等离子体蚀刻
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
Y. Tzeng
中科院分区：
文献类型：
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作者：
T. Lin;M. Belser;Y. Tzeng
利用半波整流电源产生的气态等离子体，在氧气、干燥空气和空气中对光刻胶和聚酰亚胺进行刻蚀。计算出氧等离子体刻蚀光刻胶和聚酰亚胺的活化能分别为8.6千卡/摩尔和10.9千卡/摩尔。由磁控管通过矩形波导向直径51 mm的石英管提供2.45 GHz的625 W的平均功率，该石英管以60 Hz的重复率在0.1 Hz和10 Hz之间的压力下在氧气和氮气中产生脉冲等离子体。用双朗缪尔探针和光发射光谱仪研究了等离子体。放置在等离子体下游的聚合物以高速率被蚀刻，特别是当施加外部加热以提高样品温度时。讨论了等离子体的特性及其在聚合物快速刻蚀中的应用。>
Gaseous plasma generated by a half-wave rectified power supply are characterized and applied to the etching of photoresist and polymide in oxygen, dry air, or air. Activation energies of 8.6 kcal/mole and 10.9 kcal/mole are calculated for oxygen plasma etching of photoresist and polyimide, respectively. An average power of 625 W at 2.45 GHz is supplied by a magnetron through a rectangular waveguide to a 51-mm diameter quartz tube generating pulsed plasmas in oxygen and nitrogen at pressures between 0.1 torr and 10 torr with a repetitive rate of 60 Hz. The plasmas are studied by a double Langmuir probe and an optical emission spectrometer. Polymers placed in the downstream of the plasma are etched at high rates, especially when external heating is applied to raise the sample temperature. The characteristics of the plasmas and the application to the fast etching of polymers are discussed. >