Strain-Balanced GezSn1-z-SixGeySn1-x-y Multiple-Quantum-Well Lasers
Strain-Balanced GezSn1-z-SixGeySn1-x-y Multiple-Quantum-Well Lasers
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DOI：
10.1109/jqe.2010.2059000
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发表时间：
2010-12-01
影响因子：
2.5
通讯作者：
Chuang, Shun Lien
中科院分区：
文献类型：
--
作者：
Chang, Guo-En;Chang, Shu-Wei;Chuang, Shun Lien
提出并分析了应变平衡GezSn 1-z-SixGeySn 1-x-y多量子阱激光器。通过在Ge中引入适量的α-Sn，可以实现直接带隙GeSn合金，以实现直接导带中的粒子数反转。在GeSn量子阱中引入压应变可以有效地改变价带结构，降低阈值载流子密度。计算了应变GezSn_（1-z-SixGey）Sn_（1-x-y）多量子阱激光器的电子能带结构和偏振相关的光学增益。我们还提出了我们的波导设计的折射率引导和计算的光学限制因子的各个区域。计算结果表明，模式增益可以达到阈值条件，从而产生激光作用。
We propose and analyze a strain-balanced GezSn1-z-SixGeySn1-x-y multiple-quantum-well (MQW) laser. By incorporating a proper amount of alpha-Sn into Ge, a direct-bandgap GeSn alloy can be realized to achieve population inversion in the direct conduction band. The introduction of compressive strain into the GeSn QW can effectively modify the valence band structure to reduce the threshold carrier density. We calculate the electronic band structure and the polarization-dependent optical gain of the strained GezSn1-z-SixGey Sn1-x-y MQW laser taking into account the effect of the L-conduction bands. We also present our waveguide design for index guidance and calculate the optical confinement factors of various regions. Our calculation indicates that the modal gain can reach the threshold condition and lead to lasing action.