RAMAN SCATTERING BY SILICON AND GERMANIUM
RAMAN SCATTERING BY SILICON AND GERMANIUM
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DOI：
10.1103/physrev.155.712
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发表时间：
1967-01-01
期刊：
影响因子：
--
通讯作者：
ASHKIN, M
中科院分区：
文献类型：
--
作者：
PARKER, JH;FELDMAN, DW;ASHKIN, M
用氩激光器作激发源，测量了300 K时单晶Si和Ge的拉曼散射。一阶拉曼光谱产生Si的520.2±0.5 cm− 1和Ge的300.7±0.5 cm− 1的k λ 0光学模式的能量。这些值与其他测定值合理一致。半强度时的全宽Si为4.6 cm− 1，Ge为5.3 cm− 1。这些值与理论预测进行了比较。在Si中观察到950 cm− 1处的拉曼带，这归因于二级散射，并与理论预测进行了比较。
Raman scattering from single-crystal Si and Ge at 300 K was measured using an argon laser as the exciting source. The first-order Raman spectrum yields energies for the k≈ 0 optical modes of 520.2±0.5 cm− 1 for Si and 300.7±0.5 cm− 1 for Ge. These values are in reasonable agreement with other determinations. The full widths at half-intensity were found to be 4.6 cm− 1 for Si and 5.3 cm− 1 for Ge. These values are compared with theoretical predictions. A Raman band was observed in Si at 950 cm− 1 which is attributed to second-order scattering and is compared with theoretical predictions.