Diffusion-drift modeling of carbon-based nanowire FETs
Diffusion-drift modeling of carbon-based nanowire FETs
复制标题
碳基纳米线 FET 的扩散漂移建模
DOI：
--
复制
发表时间：
2015
期刊：
影响因子：
--
通讯作者：
J. B. Boos
中科院分区：
文献类型：
--
作者：
M. Ancona;J. B. Boos
碳纳米管和石墨烯纳米带中的输运的连续介质模型通过在2D扩散漂移近似中处理碳层中的电荷流来创建。治疗的一个关键因素是电子状态方程，它允许限制和手性的影响被代表。为了模拟纳米线器件，传输层嵌入在3D结构内并耦合到静电。这说明了不同设计的碳基纳米线场效应晶体管的应用。
Continuum models of transport in carbon nanotubes and graphene nanoribbons are created by treating the charge flow in the carbon layers in a 2D diffusion-drift approximation. A crucial element of the treatment is the electron equation of state that allows the effects of confinement and chirality to be represented. To model nanowire devices, the transport layer is embedded within a 3D structure and coupled to the electrostatics. This is illustrated with applications to carbon-based nanowire field-effect transistors of varying designs.