High efficiency 20–400 MHz PWM converters using air-core inductors and monolithic power stages in a normally-off GaN process
High efficiency 20–400 MHz PWM converters using air-core inductors and monolithic power stages in a normally-off GaN process
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高效率 20–400 MHz PWM 转换器，采用常断 GaN 工艺中的空芯电感器和单片功率级
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
D. Maksimović
中科院分区：
文献类型：
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作者：
Alihossein Sepahvand;Yuanzhe Zhang;D. Maksimović
提出了一种基于集成栅极驱动器的单片常关GaN半桥功率级的高效率DC-DC变换器。介绍了一种新的栅极驱动电路，它提高了功率级效率和转换器的整体效率。虽然在GaN工艺中仅使用n型晶体管，但所提出的栅极驱动器通过模拟CMOS工艺中常用的互补操作来保持低静态功耗。电平转换是利用自举技术实现的，自举电容和自举二极管集成在同一芯片上。已经设计了一系列单片GaN芯片，目标工作电压高达45 V，输出功率高达16 W，开关频率为20-400 MHz。GaN芯片在同步降压转换器中得到验证，其峰值功率级效率在20 MHz时达到95.0%，在50 MHz时达到94.2%，在100 MHz时达到93.2%，在200 MHz时达到86.5%，在400 MHz时达到72.5%。
This paper presents high efficiency dc-dc converters based on monolithic normally-off GaN half-bridge power stages with integrated gate drivers. A new gate driver circuitry is introduced, which enhances both the power stage efficiency and the converter overall efficiency. While using only n-type transistors in the GaN process, the proposed gate driver maintains low quiescent power consumption by emulating the complementary operation commonly employed in CMOS processes. Level shifting is accomplished using a bootstrap technique, with the bootstrap capacitor and the bootstrap diode integrated on the same chip. A family of monolithic GaN chips has been designed, targeting operation from up to 45 V, delivering up to 16 W of output power, and operating at 20-400 MHz switching frequencies. The GaN chips are verified in synchronous buck converters, demonstrating record peak power stage efficiencies of 95.0% at 20 MHz, 94.2% at 50 MHz, 93.2% at 100 MHz, 86.5% at 200 MHz, and 72.5% at 400 MHz.