Influence of the microstructure on the thermal properties of thin polycrystalline diamond films
Influence of the microstructure on the thermal properties of thin polycrystalline diamond films
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DOI：
10.1063/1.119886
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发表时间：
1997-09
影响因子：
4
通讯作者：
H. Verhoeven;A. Flöter;H. Reiss;R. Zachai;D. Wittorf;W. Jäger
中科院分区：
文献类型：
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作者：
H. Verhoeven;A. Flöter;H. Reiss;R. Zachai;D. Wittorf;W. Jäger
用特殊的光热技术和高分辨电子显微镜(HRTEM)研究了在不同衬底温度(500℃、550℃和800℃)下用微波等离子体化学气相沉积技术在硅上沉积的厚度仅为几微米的高度取向的柱状金刚石层。对于垂直于界面的热传导，测得金刚石-硅界面的有效小电阻为<；4×10−9m2K/W。垂直于界面的导热系数k⊥比平行于界面的导热系数k∥(k⊥/k∥=9-18)大一个数量级。测量的边界电阻与HRTEM观察到的界面结构的极限值符合得很好，这表明层的近界面无序程度很低。
Highly oriented and columnar grained diamond layers only a few microns thick, deposited at different substrate temperatures (500, 550, and 800 °C) on silicon using microwave-plasma-assisted chemical vapor deposition, are investigated by special photothermal techniques and high-resolution transmission electron microscopy (HRTEM). Small effective diamond–silicon boundary resistances of <4×10−9 m2 K/W are determined for thermal conduction normal to the interface. Thermal conductivities normal to the interface, k⊥, are found to be about an order of magnitude greater than the conductivities parallel to the interface, k∥ (k⊥/k∥=9–18). The boundary resistances measured are in good agreement with limits estimated from the interface structure observed by HRTEM, which indicate a low near-interfacial disorder for the layers.