Field emission from an electron-beam irradiated C60 film
Field emission from an electron-beam irradiated C60 film
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电子束照射的 C60 薄膜的场致发射
DOI：
10.1063/1.1522745
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发表时间：
2002
影响因子：
3.2
通讯作者：
K. Takeuchi
中科院分区：
文献类型：
--
作者：
T. Hara;J. Onoe;K. Takeuchi
研究了电子束辐照C60薄膜的场发射特性。不锈钢基底上的C60膜首先在真空中用3 keV的EB照射10 h，然后在氢气气氛下照射10 h，以诱导相邻C60分子之间的聚结反应，并将提供良好发射位点的C-H键引入到膜表面。原位傅立叶变换红外光谱证实了聚结反应和C-H键的形成。研究发现，经过20小时辐照的C60薄膜的场发射增强。这种增强作用在C60膜的结构变化方面进行了讨论。
The field-emission characteristics of an electron-beam (EB) irradiated C60 film have been investigated. A C60 film on a stainless-steel substrate was irradiated by a 3 keV EB primarily for 10 h in an ultrahigh vacuum and subsequently for 10 h under a hydrogen atmosphere in order to induce a coalescence reaction between the adjacent C60 molecules and to introduce C–H bonds, which provide a good emission site, to the film surface. The coalescence reaction and C–H bond formation were confirmed by in situ Fourier-transform infrared spectroscopy. It was found that the field emission was enhanced for the 20 h irradiated C60 film. This enhancement was discussed in terms of the structural change in the C60 film.