High Current Operation of a Semi-insulating Gallium Arsenide Photoconductive Semiconductor Switch Triggering a Spark Gap
High Current Operation of a Semi-insulating Gallium Arsenide Photoconductive Semiconductor Switch Triggering a Spark Gap
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DOI：
10.1088/0256-307x/27/2/024212
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发表时间：
2010-02
影响因子：
3.5
通讯作者：
Xu Ming;Shi Wei;Hou Lei;Xue Hong;Shen-Jiang Wu;Hui-Ying Dai
中科院分区：
文献类型：
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作者：
Xu Ming;Shi Wei;Hou Lei;Xue Hong;Shen-Jiang Wu;Hui-Ying Dai
用GaAs光电导半导体开关（PCSS）与火花隙串联，获得了高达5.6kA的瞬态峰值电流。根据GaAs光导开关的特性，讨论了光导开关与火花隙之间的放电机理。这意味着由于偏压和瞬时射频电压的叠加，光激活电荷畴的混合操作模式发生。
A transient peak current as high as 5.6 kA is obtained by a GaAs photoconductive semiconductor switch (PCSS) in series with a spark gap. Based on the characteristics of the GaAs PCSS, mechanisms of discharge between the PCSS and the spark gap are discussed. It is implied that a hybrid operation mode of photo-activated charge domain occurs due to the superposition of the bias voltage and the instantaneous radio frequency voltage.