Spin-related magnetoresistance oscillations in the inversion layer on bulk p-Hg1―xCdxTe
Spin-related magnetoresistance oscillations in the inversion layer on bulk p-Hg1―xCdxTe
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块体 p-Hg1―xCdxTe 反型层中与自旋相关的磁阻振荡
DOI：
10.1063/1.3590730
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
J. Chu
中科院分区：
文献类型：
--
作者：
L. Shang;T. Lin;W. Z. Zhou;L. M. Wei;Y. F. Wei;Y. H. Sun;S. Guo;P. Yang;J. Chu
我们研究了低温下p-Hg 1 −xCdxTe体材料反型层中二维电子气的自旋相关振荡磁阻效应。发现振荡磁电阻在低磁场下呈现拍频模式，在高磁场下呈现自旋分裂结构。通过对快速傅里叶变换结果和霍尔电阻的分析，我们将拍频模式归因于自旋轨道耦合引起的零场自旋分裂。通过调制振荡磁电阻，研究了自旋轨道耦合、塞曼分裂和第二布居子带对振荡磁电阻拍频图案和自旋分裂结构的影响。强的自旋-轨道耦合和大的有效g因子被证明是控制体材料p-Hg 1 −xCdxTe反型层中自旋相关振荡磁电阻出现的重要参数。磁电阻数据与实验结果吻合较好。
We have investigated spin-related oscillatory magnetoresistances of the two-dimensional electron gas in the inversion layer on bulk p-Hg1−xCdxTe at low temperatures. The oscillatory magnetoresistances are found to display beating pattern at low magnetic fields and to exhibit spin-splitting structure at high magnetic fields. We attribute the beating pattern to zero-field spin splitting due to spin-orbit coupling by analyzing fast-Fourier-transform results and Hall resistance. By modulating the oscillatory magnetoresistances we investigate the influence of spin-orbit coupling, Zeeman splitting, and the second populated subband on the appearance of beating patterns and the spin-splitting structure in oscillatory magnetoresistances. The strong spin-orbit coupling and the large effective g factor are demonstrated to be the significant parameters in controlling the appearance of spin-related oscillatory magnetoresistance in the inversion layer on bulk p-Hg1−xCdxTe. A good agreement between magnetoresistance dat...