Ring-crack initiation in micrometer-scale Hertz indentation simulated by controlled molecular dynamics
Ring-crack initiation in micrometer-scale Hertz indentation simulated by controlled molecular dynamics
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通过受控分子动力学模拟微米级赫兹压痕中的环裂纹萌生
DOI：
10.1504/ijnm.2010.034768
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发表时间：
2010
影响因子：
--
通讯作者：
N. Takezawa
中科院分区：
文献类型：
--
作者：
T. Inamura;Y. Shishikura;S. Hirota;N. Takezawa
使用作者提出的受控分子动力学模拟了赫兹压痕。模拟结果表明，即使在没有预先存在缺陷的单晶硅中，在压痕过程中也可能会引发可能发展为环形裂纹的缺陷。当静态拉应力与可能来自现场附近非晶区域的声波相关的动态力耦合时，缺陷萌生发生在硅和金刚石压头之间的接触表面的外周外侧。
Hertz indentation has been simulated using the controlled molecular dynamics proposed by the authors. The result of the simulation shows that a defect, which may develop into a ring crack, can be initiated during indentation even in monocrystalline silicon with no preexisting defect. The defect initiation occurs just outside the outer periphery of the contact surface between silicon and a diamond indenter when the static tensile stress is coupled there with the dynamic force associated with acoustic waves that may come from nearby amorphous areas in the field.