Deep-level transient spectroscopy study on double implanted n+–p and p+–n 4H-SiC diodes
Deep-level transient spectroscopy study on double implanted n+–p and p+–n 4H-SiC diodes
复制标题
双注入n+–p和p+–n 4H-SiC二极管的深能级瞬态光谱研究
DOI：
10.1063/1.1623631
复制
发表时间：
2004
影响因子：
3.2
通讯作者：
S. R. Wilson
中科院分区：
文献类型：
--
作者：
S. Mitra;M. V. Rao;N. Papanicolaou;K. Jones;M. Derenge;O. W. Holland;R. Vispute;S. R. Wilson
采用双注入技术(深程受主和浅程施主注入，反之亦然)在4H-SiC外延层中制备了平面n+-p和p+-n结二极管，用电容深能级瞬变谱(DLTS)检测深能级，这可能会影响器件的电性能。采用Al或B作为受主，N或P作为施主，所有注入均在700 °C下进行，并在1600-1650 °C下带AlN保护帽进行热处理。对于不同的杂质，观察到不同的陷阱，这被认为与不同的杂质-缺陷复合体有关。在注氮样品中观察到∼eV+0.51 eV处的陷阱，而在Al注入样品中观察到∼eV+0.28 eV处的受主陷阱和∼EC−0.42 eV处的施主陷阱。在注入B的二极管的DLTS谱中，在∼eV+0.63 eV处发现了一个与B有关的D中心陷阱。在注入磷的二极管中，三个陷阱分别位于∼eV+0.6 eV，eV+0.7 eV和eV+0.92 EV处.
Planar n+–p and p+–n junction diodes, fabricated in 4H-SiC epitaxial layers using a double-implantation technology (a deep-range acceptor followed by a shallow-range donor implantation and vice versa), are characterized using capacitance deep-level transient spectroscopy (DLTS) to detect deep levels, which may influence device electrical performance. Either Al or B was used as the acceptor, while N or P was used as the donor, with all implants performed at 700 °C and annealed at 1600–1650 °C with an AlN protection cap. Different traps were observed for the various dopants, which are believed to be related to different impurity-defect complexes. A trap at ∼EV+0.51 eV was observed in nitrogen-implanted samples, while an acceptor trap at ∼EV+0.28 eV and a donor trap at ∼EC−0.42 eV were observed in Al-implanted samples. A prominent boron-related D-center trap at ∼EV+0.63 eV is seen in the DLTS spectra of B-implanted diodes. In diodes with implanted phosphorus, three traps at ∼EV+0.6 eV, EV+0.7 eV, and EV+0.92...