Origin of magnetoresistance suppression in thin γ−MoTe2
Origin of magnetoresistance suppression in thin γ−MoTe2
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DOI：
10.1103/physrevb.97.241409
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发表时间：
2018-05
影响因子：
3.7
通讯作者：
Shazhou Zhong;A. Tiwari;G. Nichols;Fangchu Chen;Xuan Luo;Yuping Sun;A. W. Tsen
中科院分区：
文献类型：
--
作者：
Shazhou Zhong;A. Tiwari;G. Nichols;Fangchu Chen;Xuan Luo;Yuping Sun;A. W. Tsen
我们使用经典磁输运和量子振荡测量来研究超大磁阻（XMR）材料和ii型Weyl半金属候选材料$\gamma$-MoTe$_2$免于氧化的厚度演变。我们发现，随着厚度的减小，磁阻被系统地抑制。这伴随着载流子迁移率的降低和电子-空穴不平衡的增加而发生。我们分别模拟了这两种效应，并得出结论，XMR效应对前者更敏感。
We use both classical magnetotransport and quantum oscillation measurements to study the thickness evolution of the extremely large magnetoresistance (XMR) material and type-II Weyl semimetal candidate, $\gamma$-MoTe$_2$, protected from oxidation. We find that the magnetoresistance is systematically suppressed with reduced thickness. This occurs concomitantly with both a decrease in carrier mobility and increase in electron-hole imbalance. We model the two effects separately and conclude that the XMR effect is more sensitive to the former.