Magneto-resistance effect element, and magnetic memory device
Magneto-resistance effect element, and magnetic memory device
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磁阻效应元件及磁存储装置
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
Y. Shimizu
中科院分区：
文献类型：
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作者：
H. Ashida;T. Ibusuki;T. Ochiai;Y. Shimizu
提供了一种包括自由磁性层的磁阻效应元件。自由磁性层形成在叠层中，该叠层包括具有固定磁化方向的固定磁化层、形成在固定磁化层上的非磁性层、第一铁磁层、形成在第一铁磁层上的非磁性金属层和形成在非磁性金属层上的第二铁磁层。自由磁性层包括磁记录区域，并且在每个区域中，第一铁磁层和第二铁磁层耦合，使得它们的磁化方向彼此反平行，并且磁记录区域之一与固定磁化层相对，非磁性层位于它们之间。
A magnetoresistance effect element comprising a free magnetic layer is provided. The free magnetic layer is formed in a laminate comprising a fixed magnetization layer with a fixed magnetization direction, a nonmagnetic layer which is formed on the fixed magnetization layer, a first ferromagnetic layer, a nonmagnetic metal layer which is formed on the first ferromagnetic layer, and a second ferromagnetic layer which is formed on the non-magnetic metal layer. The free magnetic layer includes magnetic recording regions and in each region, the first ferromagnetic layer and the second ferromagnetic layer are coupled so that their magnetization directions are antiparallel to each other, and one of the magnetic recording regions is opposite the fixed magnetization layer therebetween with the non-magnetic layer.
影响因子：
3.2
作者：
T. Nozaki;Y. Jiang;H. Sukegawa;N. Tezuka;A. Hirohata;K. Inomata;S. Sugimoto
通讯作者：
T. Nozaki;Y. Jiang;H. Sukegawa;N. Tezuka;A. Hirohata;K. Inomata;S. Sugimoto