Silicon-substrate-induced enhancement of infrared light absorption for all-optical magnetic switching
Silicon-substrate-induced enhancement of infrared light absorption for all-optical magnetic switching
复制标题
硅衬底诱导增强全光磁开关的红外光吸收
DOI：
10.1063/5.0080052
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发表时间：
2022-01
影响因子：
4
通讯作者：
C. Davies;I. Razdolski;T. Janssen;K. Mishra;A. Tsukamoto;A. Kirilyuk
中科院分区：
文献类型：
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作者：
C. Davies;I. Razdolski;T. Janssen;K. Mishra;A. Tsukamoto;A. Kirilyuk
增强光吸收强度是提高光技术能源效率的重要途径。在这里，我们通过实验和数值探索了如何利用硅基板（长期以来被认为仅仅是 CMOS 兼容材料的支撑结构）来改善中远红外光谱范围内的光学吸收，从而降低全光磁化开关的能量需求。我们证明，与直接照射金属的传统方法相比，通过 500 µm 厚的硅基板对金属进行红外照射实际上会在金属薄膜中沉积更多的能量（几乎是 3 倍）。我们的结果表明，硅基板实际上可以在向功能材料有效光学传输能量方面发挥关键作用，并将在涉及中红外和远红外光的各种实验和技术中得到应用。已发表
Enhancing the strength of optical absorption represents an important route toward improving the energy-efficiency of light-based technologies. Here, we experimentally and numerically explore how silicon substrates—long considered to be mere supporting structures for CMOS-compatible materials—can be exploited to improve optical absorption in the mid-to far-infrared spectral ranges, thus reducing the energy requirement for all-optical switching of magnetization. We show that infrared illumination of the metal through a 500 l m-thick silicon substrate actually deposits more energy in the metal film (by a factor of almost 3) compared to the conventional approach of illuminating the metal directly. Our results reveal that silicon substrates can actually play a crucial role in the efficient optical delivery of energy to functional materials and will find application in a wide range of experiments and technologies involving mid-and far-infrared light. Published