Electrical characterization and Auger depth profiling of nanogap electrodes fabricated by I2-assisted focused ion beam
Electrical characterization and Auger depth profiling of nanogap electrodes fabricated by I2-assisted focused ion beam
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DOI：
10.1063/1.2364833
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发表时间：
2006-10
影响因子：
4
通讯作者：
G. Gazzadi;E. Angeli;P. Facci;S. Frabboni
中科院分区：
文献类型：
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作者：
G. Gazzadi;E. Angeli;P. Facci;S. Frabboni
碘（I2）辅助，30 keV的Ga+聚焦离子束（FIB）已被用来制造纳米间隙Au电极，并已与传统的FIB铣削。电气特性表明，I2辅助使绝缘电阻从300- 400 G Ω提高到20 - 50 T Ω。俄歇深度剖面分析表明，在FIB球磨样品中Ga的浓度分布有一个峰值，为25 at.%在7 nm处，并且随着高斯尾的减小而向下延伸到40 nm，而在I2处理的样品中，Ga浓度降低到5at.%以下。I2辅助使最小能隙尺寸从8 nm增加到16 nm，并使Au表面形貌显著粗糙化。
Iodine (I2)-assisted, 30keV Ga+ focused ion beam (FIB) has been employed to fabricate nanogap Au electrodes and has been compared to conventional FIB milling. Electrical characterization shows that I2 assistance improves insulation resistance from 300–400GΩto20–50TΩ. Auger depth profiling reveals that the Ga concentration profile in FIB-milled samples has a peak value of 25at.% at 7nm and extends, with a decreasing Gaussian tail, down to 40nm, whereas in I2-processed samples Ga concentration is reduced below 5at.%. I2 assistance is found to increase minimum gap size from 8to16nm and to markedly roughen Au surface morphology.