Magnetic properties of heavily Mn-doped quaternary alloy ferromagnetic semiconductor (InGaMn)As grown on InP
Magnetic properties of heavily Mn-doped quaternary alloy ferromagnetic semiconductor (InGaMn)As grown on InP
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DOI：
10.1063/1.1610788
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发表时间：
2003-09-15
影响因子：
4
通讯作者：
Tanaka, M
中科院分区：
文献类型：
--
作者：
Ohya, S;Kobayashi, H;Tanaka, M
本文研究了用低温分子束外延技术在InP衬底上生长的重掺Mn的[（In_（0.44）Ga_（0.56））（0.79）Mn-0.21]As薄膜的磁性。通过将生长温度降低到190 ℃，获得了具有高Mn含量（21%）的（InGaMn）As。当[（In0.44Ga0.56）（0.79）Mn-0.21]As层的厚度等于或小于10 nm时，反射高能电子衍射图案和透射电子显微镜显示没有MnAs团簇，表明生长了均匀的单晶。磁圆二色性表征以及输运和磁化强度测量表明，居里温度为125-130 K。(C)2003年，美国物理学会。
We have studied magnetic properties of heavily Mn-doped [(In0.44Ga0.56)(0.79)Mn-0.21]As thin films grown by low-temperature molecular-beam epitaxy on InP substrates. (InGaMn)As with high Mn content (21%) was obtained by decreasing the growth temperature to 190 degreesC. When the thickness of the [(In0.44Ga0.56)(0.79)Mn-0.21]As layer is equal or thinner than 10 nm, the reflection high-energy electron diffraction pattern and transmission electron microscopy show no MnAs clustering, indicating that a homogeneous single crystal was grown. Magnetic circular dicroism characterizations, as well as transport and magnetization measurements, indicate that the Curie temperature is 125-130 K. (C) 2003 American Institute of Physics.