Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE
Metamorphic lasers for 1.3-µm spectral range grown on GaAs substrates by MBE
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DOI：
10.1134/1.1610131
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发表时间：
2003-09
期刊：
影响因子：
0.7
通讯作者：
A. Zhukov;A. Kovsh;S. Mikhrin;E. Semenova;N. Maleev;A. P. Vasil’ev;E. Nikitina;N. V. Kryzhanovskaya;A. Gladyshev;Y. Shernyakov;Y. Musikhin;M. Maksimov;N. Ledentsov;V. Ustinov;Z. Alferov
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文献类型：
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作者：
A. Zhukov;A. Kovsh;S. Mikhrin;E. Semenova;N. Maleev;A. P. Vasil’ev;E. Nikitina;N. V. Kryzhanovskaya;A. Gladyshev;Y. Shernyakov;Y. Musikhin;M. Maksimov;N. Ledentsov;V. Ustinov;Z. Alferov
报道了一种在砷化镓衬底上外延形成1.3微米注入激光器的新方法。In含量约为20%的变质异质结构沉积在用于失配应变弛豫的中间缓冲层上。激光活动区是由In含量较高(约40%)的量子阱形成的。具有100微米宽条纹的激光器的室温激光输出为1.29微米，最小阈值电流密度为3.3kA cm2(0.4kA cm2atT=85K)。
A new method for the epitaxial formation of 1.3-µm injection lasers on GaAs substrates is reported. A metamorphic heterostructure with an In content of about 20% is deposited onto an intermediate buffer layer intended for mismatch strain relaxation. The laser active region is formed by quantum wells with a higher In content (about 40%). Lasers with 100-µm-wide stripes demonstrate room-temperature lasing at 1.29 µm with a minimum threshold current density of 3.3 kA cm2(0.4 kA cm2atT=85 K).