NiO removal of Ni/Au Ohmic contact to p-GaN after annealing
NiO removal of Ni/Au Ohmic contact to p-GaN after annealing
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DOI：
10.1088/1674-4926/30/2/026001
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发表时间：
2009-02-01
影响因子：
5.1
通讯作者：
Chen Lianghui
中科院分区：
文献类型：
--
作者：
Lin Mengzhe;Cao Qing;Chen Lianghui
在02环境下退火后用草酸处理Ni/Au触点，其I-V特性表明触点性能有明显改善。退火后触点的俄歇电子能谱（AES）深度剖面表明，触点表层为高阻NiO，而草酸处理后样品的x射线光电子能谱（XPS）表明，NiO已被有效去除。利用扫描电镜（SEM）观察了触点的表面形貌，发现经过草酸处理后，退火后的凹穴表面变得非常光滑，有许多小的Au暴露区。当测试探针或随后沉积的Ti/Au直接与这些小Au区域接触时，它们作为低阻电流路径工作，从而降低了比接触电阻。
The Ni/Au contact was treated with oxalic acid after annealing in 02 ambient, and its I-V characteristic showed the property of contact has been obviously improved. An Auger electron spectroscopy (AES) depth profile of the contact as-annealed showed that the top layer was highly resistive NiO, while an X-ray photo-electron spectroscopy (XPS) of oxalic acid treated samples indicated that the NiO has been removed effectively. A scanning electron microscope (SEM) was used to observe the surface morphology of the contacts, and it was found that the lacunaris surface right after annealing became quite smooth with lots of small Au exposed areas after oxalic acid treatment. When the test probe or the subsequently deposited Ti/Au was directly in contact with these small Au areas, they worked as low resistive current paths and thus decrease the specific contact resistance.