Preparation of electron-doped La2−xCexCuO4±δ thin films with various Ce doping by dc magnetron sputtering
Preparation of electron-doped La2−xCexCuO4±δ thin films with various Ce doping by dc magnetron sputtering
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DOI：
10.1016/j.physc.2009.05.259
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发表时间：
2009-08
影响因子：
1.7
通讯作者：
B. Wu;K. Jin;J. Yuan;H. Wang;T. Hatano;B. Zhao;B. Zhu
中科院分区：
文献类型：
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作者：
B. Wu;K. Jin;J. Yuan;H. Wang;T. Hatano;B. Zhao;B. Zhu
用直流磁控溅射技术在(100)SrTiO_3衬底上制备了从重欠掺杂x=0.06到重过掺x=0.19的一系列c轴电子掺杂高T_c超导La(2-x)CexCuO_4薄膜。考察了沉积温度、沉积速率等制备条件对薄膜质量的影响。我们发现，在过掺杂区，薄膜的质量对沉积温度的敏感度比在欠掺杂区要小。在T_c(X)的相图中，超导穹顶的最佳掺杂水平为x=0.105，相变温度T_c_0=26.5K，并且在H=10T附近观察到低温下(T)曲线上翻的消失，并且在x=0.15时观察到正的微分霍尔系数，这意味着在该掺杂水平下可能发生费米面的重排。
A series of c-axis oriented electron-doped high-Tc superconducting La(2-x)CexCuO4 thin films, from heavily underdoped x=0.06 to heavily overdoped x=0.19, have been synthesized by dc magnetron sputtering technique on (100) SrTiO3 substrates. The influence of various fabrication conditions, such as the deposition temperature and the deposition rate, etc., on the quality of the thin films has been scrutinized. We find that the quality of the films is less sensitive to the deposition temperature in the overdoped region than that in the underdoped region. In the phase diagram of Tc(x), the superconducting dome indicates that the optimally doping level is at the point x=0.105 with the transition temperature Tc0 = 26.5 K. Further more, both the disappearance of the upturn in the(T) curve at low temperature under H=10 T and the positive differential Hall coefficient,, are observed around x = 0.15, implying a possible rearrangement of Fermi surface at this doping level.