Crystal growth and scintillation characteristics of the Nd3+ doped LaF3 single crystal
Crystal growth and scintillation characteristics of the Nd3+ doped LaF3 single crystal
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DOI：
10.1016/j.optmat.2010.03.021
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发表时间：
2010-07
影响因子：
3.9
通讯作者：
K. Fukuda;N. Kawaguchi;S. Ishizu;T. Yanagida;T. Suyama;M. Nikl;A. Yoshikawa
中科院分区：
文献类型：
--
作者：
K. Fukuda;N. Kawaguchi;S. Ishizu;T. Yanagida;T. Suyama;M. Nikl;A. Yoshikawa
采用提拉法生长了直径为2英寸的掺Nd ~（3+）LaF_3单晶。从真空紫外光谱区的光吸收测量中没有观察到由于不利的杂质或色心而引起的显著吸收。X射线摇摆曲线和化学成分分析表明，样品结晶度高，Nd ~（3+）分布均匀。测量了晶体的X射线激发发光光谱，发现晶体在173 nm处有明显的4f 25 d-4f 3发光。在γ射线辐照下，测量了脉冲高度谱和闪烁衰减曲线。结果表明，生长的晶体对γ射线有足够的响应，光产额为140± 30 photons/MeV，闪烁衰减为7.6ns。
Two-inch diameter Nd3+doped LaF3single crystals were successfully grown by the Czochralski technique. No remarkable absorption due to unfavorable impurities or color centers was observed from optical absorption measurements in the vacuum ultra-violet spectral region. The high crystallinity and homogeneous Nd3+distribution were found from X-ray rocking curve and chemical composition analysis, respectively. X-ray excited luminescence spectrum was measured and the significant 4f25d–4f3luminescence at 173nm was observed in the grown crystal. The pulse height spectrum and scintillation decay curves were taken upon γ-ray irradiation. As a result, the grown crystals demonstrated sufficient response to the γ-ray, the light yield of 140±30photons/MeV, and fast scintillation decay of 7.6ns.