Extrinsic time-dependent dielectric breakdown of low-k organosilicate thin films from vacuum-ultraviolet irradiation
Extrinsic time-dependent dielectric breakdown of low-k organosilicate thin films from vacuum-ultraviolet irradiation
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真空紫外线照射下低 k 有机硅酸盐薄膜的外在时间依赖性介电击穿
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
Y. Nishi
中科院分区：
文献类型：
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作者：
X. Guo;D. Pei;Hui;Weiyi Li;J. Shohet;S. King;Yi;H. Fung;Cheng;Y. Nishi
本文研究了真空紫外（VUV）光子辐照对低钾有机硅酸盐薄膜时介电击穿（TDDB）的影响，重点研究了外源的TDDB（包括Cu迁移效应）。最先进的低k a- sioc:H薄膜被利用，因为它们既可以作为层间介质，也可以作为候选的Cu盖层材料。同步辐射被用来模拟在没有带电粒子存在的情况下加工等离子体的VUV光子辐照。基于Ti/a- sioc:H/Cu金属-绝缘体-金属结构，测量了低k a- sioc:H电介质在紫外光子照射前后的TDDB特性寿命。在9ev能量的VUV光子照射后，观察到薄膜中外源TDDB的劣化。在9.0 eV VUV光子照射（光子通量为4…）后，以Cu电极为阳极时，样品的介电特性寿命下降最为显著。
In this work, the effect of vacuum ultraviolet (VUV) photon irradiation on the time-dependent dielectric breakdown (TDDB) of low-k organosilicate thin films was investigated, with particular emphasis on extrinsic TDDB (includes Cu migration effects). State-of-the-art low-k a-SiOC:H thin films were utilized because of their relevance as both an interlayer dielectric and as a candidate Cu capping-layer material. Synchrotron radiation was used to mimic VUV photon irradiation from processing plasmas without the presence of charged particles. TDDB characteristic lifetimes of the low-k a-SiOC:H dielectrics, before and after VUV photon exposure, were measured based on a Ti/a-SiOC:H/Cu metal-insulator-metal structure. The deterioration of extrinsic TDDB was observed in the film after exposure to VUV photons with 9 eV energy. The most notable degradation of the dielectric characteristic lifetime was found when the Cu electrode was used as an anode in the sample after 9.0 eV VUV photon exposure (photon fluence is 4...