Measurement of oxygen adsorption on silicon by ellipsometry
Measurement of oxygen adsorption on silicon by ellipsometry
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椭圆光度法测量硅上的氧吸附
DOI：
10.1016/0022-3697(65)90163-0
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发表时间：
1964
期刊：
影响因子：
--
通讯作者：
G. Gobeli
中科院分区：
文献类型：
--
作者：
R. J. Archer;G. Gobeli
本文用椭圆偏振法研究了氧在新解理的硅（111）面上的吸附。达到±0.02单层的精密度。在单层覆盖下的膜厚度的椭圆偏振值为4.6 μ m ± 1.6 μ m。一个二维的理论是用来获得亚单层覆盖的程度。第一单层吸附的动力学和进一步的膜生长的特性被发现是强烈敏感的存在或不存在的操作Bayard-Alpert电离规在真空系统中。在没有压力计的情况下，结果被认为是纯分子氧环境的特征，并给出：（a）平均粘附系数约为0.001（恒定且与压力无关）直至单层的~0.7的覆盖率，随后急剧降低至θ ~1.0，以及（B）随后的膜生长具有不可再现性，在103 ~ 104 min后，反应终止于θ= 1.4 ~ 1.7。当真空计工作时，由于环境中的一种未识别的污染物，结果发生了变化：（a）单层范围内的粘附系数增大了6倍，（B）随后的薄膜以更快的速度通过第二层以螺旋方式生长，并且当覆盖率达到θ= 3.5时没有终止的迹象。
The adsorption of oxygen on freshly cleaved (111) faces of silicon was studied by the technique of ellipsometry. A precision of ±0.02 monolayers was achieved. The ellipsometric value for the thickness of the film at monolayer coverage is 4.6 Å ± 1.6 Å. A two dimensional theory is used to obtain the degree of submonolayer coverage. Both the kinetics of the first monolayer adsorption and the characteristics of further film growth were found to be strongly sensitive to the presence or absence of an operating Bayard-Alpert ionization gauge in the vacuum system. Without the gauge the results are considered to be characteristic of a pure molecular oxygen ambient and give: (a) an average sticking coefficient of ~0.001 (constant and pressure independent) up to a coverage of ~0.7 of a monolayer followed by a sharp decrease to θ ~1.0, and (b) a subsequent film growth with irreproducible, pressure independent kinetics which terminates atθ= 1.4 to 1.7 after 103to 104min. With the gauge in operation the results are modified by an unidentified contaminant of the ambient: (a) the sticking coefficient in the monolayer range is greater by a factor of 6, and (b) the subsequent film grows logarithmically through the second layer at a more rapid rate and shows no signs of terminating for coverages as great asθ= 3.5.