Thickness study of AZO films by RF sputtering in Ar + H2 atmosphere at room temperature
Thickness study of AZO films by RF sputtering in Ar + H2 atmosphere at room temperature
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DOI：
10.1002/pssa.201228014
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发表时间：
2012-07
期刊：
影响因子：
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通讯作者：
B. Zhu;J. Wang;S. Zhu;J. Wu;D. Zeng;C. Xie
中科院分区：
文献类型：
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作者：
B. Zhu;J. Wang;S. Zhu;J. Wu;D. Zeng;C. Xie
室温、Ar + 5%H2 环境下，通过射频磁控溅射在玻璃基板上制备了 Al 掺杂 ZnO (AZO) 薄膜。研究了薄膜厚度（85-1101 nm）对薄膜结构、电学和光学性能的影响。随着膜厚度的增加，发现膜的结晶度提高并且膜的表面粗糙度增加。电阻率的降低伴随着载流子浓度和迁移率的增加。在膜厚为583~1101 nm时，可以获得较大的薄膜品质因数（FOM），其中厚度为803 nm的薄膜电阻率最低，为3.13 × 10−4 Ω·cm，方块电阻为3.90 Ω/sq，可见光范围内的平均光学透过率为80%。随着薄膜厚度的增加，薄膜的微晶尺寸、载流子浓度和迁移率同时增加，这意味着主要的散射机制是晶间边界散射。研究发现，光学带隙（Eg）随着薄膜厚度的增加从3.50 eV增加到3.72 eV，在考虑所有可能的影响因素后，这种增加可以归因于Burstein-Moss（BM）效应。结果表明，室温下在 Ar + H2 气氛中沉积的 AZO 薄膜适合作为透明导电电极层应用于薄膜太阳能电池。
Al‐doped ZnO (AZO) films were prepared on glass substrates by RF magnetron sputtering in an Ar + 5%H2 ambient at room temperature. The influence of film thickness (85–1101 nm) on the structural, electrical, and optical properties of the films was investigated. With increasing film thickness, it is found that the crystallinity of the films is improved and the surface roughness of the films increases. The decrease of resistivity is accompanied by an increase of carrier concentration and mobility. At the film thickness of 583–1101 nm, larger figures of merit (FOM) of the films can be obtained, in which the film with a thickness of 803 nm has the lowest resistivity of 3.13 × 10−4 Ω cm, a sheet resistance of 3.90 Ω/sq, and an average optical transmittance in the visible range of 80%. With increasing film thickness, the crystallite size, carrier concentration, and mobility of the films increase simultaneously, implying that the main scattering mechanism is the intercrystallite boundary scattering. It is found that the optical bandgap (Eg) increases from 3.50 to 3.72 eV with film thickness, and this increase can be ascribed to the Burstein–Moss (BM) effect after considering all possible effect factors. The results demonstrate that AZO films deposited in an Ar + H2 atmosphere at room temperature are suitable for application in thin‐film solar cells as transparent conductive electrode layers.