Active Terahertz Modulator and Slow Light Metamaterial Devices with Hybrid Graphene-Superconductor Photonic Integrated Circuits.
Active Terahertz Modulator and Slow Light Metamaterial Devices with Hybrid Graphene-Superconductor Photonic Integrated Circuits.
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DOI：
10.3390/nano11112999
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发表时间：
2021-11-08
期刊：
影响因子：
--
通讯作者：
Delfanazari K
中科院分区：
文献类型：
--
作者：
Kalhor S;Kindness SJ;Wallis R;Beere HE;Ghanaatshoar M;Degl'Innocenti R;Kelly MJ;Hofmann S;Joyce HJ;Ritchie DA;Delfanazari K
介绍并提出了具有混合石墨烯-超导耦合开环谐振器（SRR）阵列的超材料光子集成电路，能够调制和减慢太赫兹（THz）光。混合器件的光学响应，例如电磁感应透明 (EIT) 和群延迟，可以通过多种方式进行调制。首先，通过改变石墨烯中的电导率和载流子浓度来对其进行电调制。或者，可以通过将 Nb 从有损耗正态相切换到低于 Nb 转变温度 (Tc) 的低损耗量子力学相来影响器件温度敏感性，从而修改光学响应。在太赫兹传输窗口处，EIT 和群延迟的最大调制深度分别达到 57.3% 和 97.61%。将 Nb-石墨烯-Nb 耦合 SRR 器件与 Au-石墨烯-Au SRR 器件进行比较，发现当 Nb 处于量子力学相时，太赫兹传输、群延迟和 EIT 响应显着增强。这种混合器件具有相当大且可调谐的慢光带宽，为实现有源光电调制器、滤波器、移相器和慢光器件在芯片级未来通信和计算系统中的应用铺平了道路。
Metamaterial photonic integrated circuits with arrays of hybrid graphene–superconductor coupled split-ring resonators (SRR) capable of modulating and slowing down terahertz (THz) light are introduced and proposed. The hybrid device’s optical responses, such as electromagnetic-induced transparency (EIT) and group delay, can be modulated in several ways. First, it is modulated electrically by changing the conductivity and carrier concentrations in graphene. Alternatively, the optical response can be modified by acting on the device temperature sensitivity by switching Nb from a lossy normal phase to a low-loss quantum mechanical phase below the transition temperature (Tc) of Nb. Maximum modulation depths of 57.3% and 97.61% are achieved for EIT and group delay at the THz transmission window, respectively. A comparison is carried out between the Nb-graphene-Nb coupled SRR-based devices with those of Au-graphene-Au SRRs, and significant enhancements of the THz transmission, group delay, and EIT responses are observed when Nb is in the quantum mechanical phase. Such hybrid devices with their reasonably large and tunable slow light bandwidth pave the way for the realization of active optoelectronic modulators, filters, phase shifters, and slow light devices for applications in chip-scale future communication and computation systems.
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影响因子：
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